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Silicon
ProTech Materials Inc supplies phosphorous or boron doped silicon
sputtering targets. Both mono crystalline and polysilicon targets are
available with a wide range of dopant densities all with 99.999% purity.
The resistivity range for P type (Boron doped) silicon is 0.005 - 0.20 ohm
cm and 0.20 - 3 ohm cm for N type (Phosphorus doped).
Sizes range from a maximum diameter of 300 mm for round targets to a
maximum plate size of 250 mm x 150 mm for planar targets. ProTech
Materials also offers rotatable silicon targets.
| Copyright © 2011 ProTech Materials Inc. All rights reserved. |
